5.2-GHZ BANDWIDTH MONOLITHIC GAAS OPTOELECTRONIC RECEIVER

被引：56
作者：
HARDER, CS
VANZEGHBROECK, B
MEIER, H
PATRICK, W
VETTIGER, P
机构：
[1] IBM, Rueschlikon, Switz, IBM, Rueschlikon, Switz
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 04期
关键词：
INTEGRATED CIRCUITS; MONOLITHIC - Fabrication - SEMICONDUCTING GALLIUM ARSENIDE - Applications;
D O I：
10.1109/55.679
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier and a 50- OMEGA output buffer stage has been fabricated using an enhancement/depletion 0. 35- mu m recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal (MSM) photodetector has a dark current of 0. 8 nA, a responsivity of 0. 2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5. 2 GHz with an effective transimpedance of 300 OMEGA into a 50- OMEGA load, which corresponds to a transimpedance bandwidth product of 1. 5 THz- OMEGA .
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页码：171 / 173
页数：3
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