SATURATION OF THE GAIN IN DIRECT OPTICAL-TRANSITIONS IN THE VALENCE BAND OF GERMANIUM

被引:0
作者
POZHELA, YK
STARIKOV, EV
SHIKTOROV, PN
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 04期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:402 / 405
页数:4
相关论文
共 11 条
[1]  
ANDRONOV AA, 1979, JETP LETT+, V30, P551
[2]  
ANDRONOV AA, 1984, JETP LETT+, V40, P804
[3]   THEORY OF THE INFRARED ABSORPTION OF CARRIERS IN GERMANIUM AND SILICON [J].
KAHN, AH .
PHYSICAL REVIEW, 1955, 97 (06) :1647-1652
[4]   EVIDENCE FOR INDUCED FAR-INFRARED EMISSION FROM PARA-GE IN CROSSED ELECTRIC AND MAGNETIC-FIELDS [J].
KOMIYAMA, S ;
IIZUKA, N ;
AKASAKA, Y .
APPLIED PHYSICS LETTERS, 1985, 47 (09) :958-960
[5]   FAR-INFRARED LASER OSCILLATION IN P-GE [J].
KOMIYAMA, S ;
KURODA, S .
SOLID STATE COMMUNICATIONS, 1986, 59 (03) :167-172
[6]  
POZHELA YK, 1985, PHYS STATUS SOLIDI B, V128, P653, DOI 10.1002/pssb.2221280231
[7]  
POZHELA YK, 1985, 17TH P INT C PHYS SE, P1333
[8]  
POZHELA YK, 1985, LITOV FIZ SB, V25, P7
[9]  
STARIKOV EV, 1986, SOV PHYS SEMICOND+, V20, P677
[10]  
VOROB'EVA L A, 1984, Pochvovedenie, P134