IR-SPECTRA OF SI3N4 FILMS, DEPOSITED FROM SICL4-NH3 AND SIH4-NH3 SYSTEMS

被引：0

作者：

POPOVA, LI ^{[1
]}

ROGALSKA, KP ^{[1
]}

机构：

[1] INST MICROELECTR,SOFIA,BULGARIA

来源：

DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE | 1976年 / 29卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：1113 / 1115

页数：3

共 50 条

[1] ELECTRICAL PROPERTIES OF MNOS DEVICES PREPARED BY SIH4-NH3 AND SICL4-NH3 METHODS
FARRINGT.D
DRABIN, RG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : C220 - &
[2] THE IR-SPECTRA OF NH4NO3
KEARLEY, GJ
KETTLE, SFA
OXTON, IA
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 1980, 36 (05) : 507 - 509
[3] CALCULATION OF DEPOSITION CONDITIONS FOR SI3N4 FROM A SIH-NH3,SICL-NH3,SIBR-NH3,SICH-NH3 GAS-PHASE
LARTIGUE, JF
DUCARROIR, M
ARMAS, B
JOURNAL OF MATERIALS SCIENCE, 1984, 19 (09) : 3079 - 3089
[4] CHARACTERIZATION OF SI3N4 POWDERS PREPARED BY SIH4 + NH3 REACTION
PROCHAZKA, S
GRESKOVICH, CD
AMERICAN CERAMIC SOCIETY BULLETIN, 1977, 56 (03): : 300 - 300
[5] Duty ratio impact on SiN films deposited in SiH4-NH3 plasma at room temperature
Kim, Daehyun
Kim, Byungwhan
Yoon, Neung-Goo
MICROELECTRONIC ENGINEERING, 2012, 89 : 116 - 119
[6] ELECTRICAL AND MECHANICAL-PROPERTIES OF SILICON-NITRIDE FILMS DEPOSITED BY THE SICL4-NH3 REACTION
MISAWA, Y
YAGI, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : 1885 - 1888
[7] SILICON NITRIDE PREPARED BY SIH4-NH3 REACTION WITH CATALYSTS
YAMAZAKI, S
WADA, K
TANIGUCHI, I
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (12) : 1467 - +
[8] PROPERTIES OF SILICON-NITRIDE FILMS DEPOSITED BY SIH-4-NH-3 SYSTEM, VARYING RATIO OF NH-3 TO SIH-4
POPOVA, LI
VITANOV, PK
LAZAROVA, VB
BESHKOV, GD
SHEKERDJIISKI, VJ
DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1976, 29 (02): : 183 - 184
[9] CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING
STEIN, HJ
WEGENER, HAR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 908 - 912
[10] MASS-SPECTROMETRIC DETECTION OF INTERMEDIATES IN CHEMICAL VAPOR-DEPOSITION OF SI3N4 FROM SICL4 AND NH3
LIN, SS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1877 - 1879

← 1 2 3 4 5 →