RHEED INTENSITY OSCILLATIONS FROM SI(111) SURFACE IN THE PRESENCE OF SURFACE RESONANCE

A reflection high-energy electron diffraction (RHEED) experiment has been carried out to show the evidence of surface resonance effects when resonance diffraction conditions are satisfied during MBE growth. First the rocking curves of RHEED intensity from an atomically clean Si(111) surface were measured before Si deposition. Then RHEED intensity oscillation curves were recorded at several angles of incidence during the homoepitaxy of Si in the MBE process. The results of those combined measurements show that there exists such an angle of incidence (corresponding to the resonance diffraction conditions on a clean surface) that many characteristic effects of the surface resonance occur. It has been demonstrated that at the resonance conditions the modulation depth of the intensity oscillations attains its maximum. Certain characteristic features of this phenomenon are analysed and a possible application to the control of the MBE process is mentioned.