MAGNITUDE AND POLARITY OF STRAIN-INDUCED FIELDS IN PSEUDOMORPHIC IN0.2GA0.8AS QUANTUM-WELL STRUCTURES ON (112) GAAS SUBSTRATES

被引：1

作者：

SUN, D ^{[1
]}

HENDERSON, RH ^{[1
]}

TOWE, E ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22903

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

D O I：

10.1016/0022-0248(95)80257-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

When pseudomorphic (in,Ga)As/(Al,Ga)As heterostructures are grown on certain surfaces of the general crystallographic planes of GaAs denoted by (11l), the strain in the structures induces an electric field because of the piezoelectric nature of the III-V semiconductors. We report the experimental determination of the direction and magnitude of the strain-induced electric field by photoluminescence spectroscopy on one of these substrate surfaces: the one for which l = 2. We confirm that for the mio surfaces of the (112) GaAs substrate. the induced field is directed out of the substrate for the A surface and toward the substrate for the B surface.

引用

页码：478 / 481

页数：4

共 9 条

[1] ELECTROOPTIC MODULATION IN POLAR GROWTH AXIS INGAAS/GAAS MULTIPLE QUANTUM-WELLS [J].