75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：346
作者：
PATTON, GL
COMFORT, JH
MEYERSON, BS
CRABBE, EF
SCILLA, GJ
DEFRESART, E
STORK, JMC
SUN, JYC
HARAME, DL
BURGHARTZ, JN
机构：
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 04期
关键词：
14;
D O I：
10.1109/55.61782
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (fT) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (Rbi) of 17 kΩ/∧, and an emitter width of 0.9 µm. This performance level, which represents almost a factor of 2 increase in the speed of a Si bipolar transistor, was achieved in a poly-emitter bipolar process by using SiGe for the base material. The germanium was graded in the 45-nm base to create a drift field of approximately 20 kV/cm, resulting in an intrinsic transit time of only 1.9 ps. © 1990 IEEE
引用
收藏
页码：171 / 173
页数：3
相关论文
共 14 条
[1]  
BURGHARTZ JN, 1989, MAY S VLSI TECHN DIG, P75
[2]  
Fischer S. E., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P890, DOI 10.1109/IEDM.1989.74197
[3]  
Gomi T., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P744, DOI 10.1109/IEDM.1988.32919
[4]   INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J].
HU, SM ;
SCHMIDT, S .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4272-+
[5]   SMALL-GEOMETRY, HIGH-PERFORMANCE, SI-SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
KAMINS, TI ;
NAUKA, K ;
KRUGER, JB ;
HOYT, JL ;
KING, CA ;
NOBLE, DB ;
GRONET, CM ;
GIBBONS, JF .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (11) :503-505
[6]   SI/SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS PRODUCED BY LIMITED REACTION PROCESSING [J].
KING, CA ;
HOYT, JL ;
GRONET, CM ;
GIBBONS, JF ;
SCOTT, MP ;
TURNER, J .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :52-54
[7]   LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION [J].
MEYERSON, BS .
APPLIED PHYSICS LETTERS, 1986, 48 (12) :797-799
[8]   SILICON GERMANIUM-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J].
PATTON, GL ;
IYER, SS ;
DELAGE, SL ;
TIWARI, S ;
STORK, JMC .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :165-167
[9]   GRADED-SIGE-BASE, POLY-EMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
PATTON, GL ;
HARAME, DL ;
STORK, JMC ;
MEYERSON, BS ;
SCILLA, GJ ;
GANIN, E .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) :534-536
[10]   CORRELATION BETWEEN THE DIFFUSIVE AND ELECTRICAL BARRIER PROPERTIES OF THE INTERFACE IN POLYSILICON CONTACTED N+-P JUNCTIONS [J].
STORK, JMC ;
ARIENZO, M ;
WONG, CY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1766-1770
12