DEPTH DISTRIBUTION OF DISORDER PRODUCED BY ROOM-TEMPERATURE 30-KEV AR+ AND CL+ ION IRRADIATION OF SILICON

被引：5

作者：

AHMED, NAG

CHRISTODOULIDES, CE

CARTER, G

机构：

[1] Department of Electrical Engineering, University of Salford, Salford

来源：

PHYSICS LETTERS A | 1979年 / 69卷 / 06期

关键词：

D O I：

10.1016/0375-9601(79)90399-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The depth distribution of disorder produced by room temperature 30 keV Ar+ and Cl+ ion irradiation of silicon was monitored by high depth resolution Rutherford backscattering-channelling techniques. A bimodal depth distribution of disorder was observed and under certain implantation conditions a clear dependence of the magnitude of disorder upon incident ion flux noted. © 1979.

引用

页码：431 / 435

页数：5