TRANSPORT ANOMALIES IN CDXHG1-XTE

被引:47
|
作者
IVANOVOMSKII, VI
BERCHENKO, NN
ELIZAROV, AI
机构
来源
关键词
D O I
10.1002/pssa.2211030102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:11 / 28
页数:18
相关论文
共 50 条
  • [21] EPITAXIAL CDXHG1-XTE PHOTOVOLTAIC DETECTORS
    BECLA, P
    PAWLIKOWSKI, JM
    INFRARED PHYSICS, 1976, 16 (04): : 457 - 464
  • [22] TWINNING IN CDTE AND CDXHG1-XTE CRYSTALS
    KURILO, IV
    KUCHMA, VI
    INORGANIC MATERIALS, 1982, 18 (04) : 479 - 482
  • [23] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE
    IRVINE, SJC
    MULLIN, JB
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 107 - 115
  • [24] DIFFUSION OF COPPER AND GOLD IN CDXHG1-XTE
    ANDRIEVS.AI
    TEODOROV.AS
    SHNEIDER, AD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1112 - 1112
  • [25] THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE
    CAPPER, P
    JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 280 - 299
  • [26] EXTRINSIC DOPING OF CDXHG1-XTE - A REVIEW
    CAPPER, P
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1989, 19 (04): : 295 - 337
  • [27] THE REFRACTIVE-INDEX OF CDXHG1-XTE
    JENSEN, B
    TORABI, A
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 409 : 12 - 17
  • [28] STUDIES OF CDXHG1-XTE EPITAXIAL FILMS
    BOVINA, LA
    MESHCHERYAKOVA, VP
    STAFEEV, VI
    BANIN, ES
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 26 - 28
  • [29] GROWTH AND PROPERTIES OF CDXHG1-XTE CRYSTALS
    BARTLETT, BE
    DEANS, J
    ELLEN, PC
    JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 266 - &
  • [30] ELECTRON-SCATTERING IN CDXHG1-XTE
    DUBOWSKI, JJ
    DIETL, T
    SZYMANSKA, W
    GALAZKA, RR
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1981, 42 (05) : 351 - 362