AN ARRAY OF DISLOCATIONS IN A STRAINED EPITAXIAL LAYER .2. WORK-HARDENING

The sequential generation of dislocations in a strained epitaxial layer is considered. It is found that an additional work component results from dislocation-dislocation interactions after some dislocations are generated and located in the interface between the epitaxial layer and the substrate. The interaction energies induced by a single dislocation and a dislocation array are derived. It is found that, in general, when the distance between a fresh dislocation and the nearest pre-existing dislocation is comparable to the layer thickness, the additional work component achieves the level of the self energy of an isolated dislocation. The additional work increases sharply with decreasing distance between the fresh and pre-existing dislocations. If the spacing between the dislocations exceeds approximately 20 times the layer thickness, the additional work becomes insignificant. These results are consistent with experimental observations.