A MECHANISM FOR GROWTH ON DIAMOND (110) FROM ACETYLENE

被引：78

作者：

BELTON, DN

HARRIS, SJ

机构：

[1] Physical Chemistry Department, General Motors Research Laboratories, Warren

来源：

JOURNAL OF CHEMICAL PHYSICS | 1992年 / 96卷 / 03期

关键词：

D O I：

10.1063/1.462033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have proposed a detailed chemical kinetics mechanism for the addition of C2H2 to a (110) diamond surface, which is the fastest growing face. The model contains no adjustable parameters and is based on the hypothesis that diamond surface chemistry may be understood in analogy with gas-phase hydrocarbon chemistry. We calculated a growth rate of 0.03-mu-m/h, which gives order-of-magnitude agreement with experiments and suggests we have a feasible mechanism for growth on (110) surfaces.

引用

页码：2371 / 2377

页数：7

共 37 条

[1]

BENSON SW, 1976, THEMROCHEMICAL KINET

[2] HYDROGEN-ATOM DETECTION IN THE FILAMENT-ASSISTED DIAMOND DEPOSITION ENVIRONMENT [J].