NEW INSIGHT INTO THE STRUCTURE AND GROWTH OF CAF2/SI(111)

被引：35
|
作者：
LUCAS, CA
LORETTO, D
机构：
[1] Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期
关键词：
D O I：
10.1063/1.107092
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have used transmission electron microscopy and x-ray crystal truncation rod measurements to investigate thin ( < 50 angstrom) CaF2 films grown on Si ( 111 ) substrates by molecular beam epitaxy. The results indicate that CaF2/Si can be structurally as perfect as NiSi2/Si and CoSi2/Si, and that a reconstructed layer is present at the CaF2/Si(111) interface.
引用
收藏
页码：2071 / 2073
页数：3
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