GROWTH OF EPITAXIAL ALUMINUM NITRIDE AND ALUMINUM NITRIDE ZIRCONIUM NITRIDE SUPERLATTICES ON SI(111)

被引：15

作者：

MENG, WJ

HEREMANS, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.578031

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Growth of epitaxial aluminum nitride (AlN) and crystalline superlattices of aluminum nitride/zirconium nitride (AlN/ZrN) on Si(111) by ultrahigh-vacuum dc magnetron reactive sputtering has been studied. Detailed structural characterizations were carried out with techniques of x-ray diffraction, transmission electron microscopy, and reflection high energy electron diffraction. Results on epitaxial orientation, defect configuration, and growth mode are discussed.

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页码：1610 / 1617

页数：8

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