AMORPHOUS-SEMICONDUCTORS AT VERY LOW-TEMPERATURES

被引:3
作者
GOLDING, B
机构
关键词
D O I
10.1016/0022-3093(80)90350-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:1125 / 1134
页数:10
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  • [1] ANOMALOUS LOW-TEMPERATURE THERMAL PROPERTIES OF GLASSES AND SPIN GLASSES
    ANDERSON, PW
    HALPERIN, BI
    VARMA, CM
    [J]. PHILOSOPHICAL MAGAZINE, 1972, 25 (01): : 1 - &
  • [2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
    ANDERSON, PW
    [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
  • [3] RELAXATION-TIMES OF MOLECULAR-IONS OH- IN GLASSES AT VERY LOW-TEMPERATURE
    BERNARD, L
    PICHE, L
    SCHUMACHER, G
    JOFFRIN, J
    [J]. JOURNAL OF LOW TEMPERATURE PHYSICS, 1979, 35 (3-4) : 411 - 431
  • [4] OPTICALLY INDUCED METASTABLE PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS
    BISHOP, SG
    STROM, U
    TAYLOR, PC
    [J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2278 - 2294
  • [5] SPECTRAL DIFFUSION, PHONON ECHOES, AND SATURATION RECOVERY IN GLASSES AT LOW-TEMPERATURES
    BLACK, JL
    HALPERIN, BI
    [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2879 - 2895
  • [6] RADIATIVE RECOMBINATION IN AMORPHOUS AS2SE3
    CERNOGOR.J
    MOLLOT, F
    BENOITAL.C
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : 401 - 407
  • [7] EXCESS ULTRASONIC-ATTENUATION IN AS2S3 GLASS AFTER ELECTRIC-FIELD REMOVAL
    CLAYTOR, TN
    SLADEK, RJ
    [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (22) : 1482 - 1485
  • [8] CRUZURIBE A, 1977, AMORPHOUS LIQUID SEM, P175
  • [9] MODEL FOR ELECTRONIC PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
    ECONOMOU, EN
    NGAI, KL
    REINECKE, TL
    [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (03) : 157 - 160
  • [10] INTRINSIC DECAY LENGTHS OF QUASIMONOCHROMATIC PHONONS IN A GLASS BELOW 1 K
    GOLDING, B
    GRAEBNER, JE
    SCHUTZ, RJ
    [J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1660 - 1662