REDUCTION OF P+-N+ JUNCTION TUNNELING CURRENT FOR BASE CURRENT IMPROVEMENT IN SI/SIGE/SI HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：1
作者：
MATUTINOVICKRSTELJ, Z
PRINZ, EJ
SCHWARTZ, PV
STURM, JC
机构：
[1] Department of Electrical Engineering, Princeton University, Princ, NJ
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 04期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/55.75751
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a three order of magnitude reduction in parasitic tunneling current at heavily doped p+-n+ Si/Si and SiGe/Si junctions grown by rapid thermal epitaxial chemical vapor deposition compared to previously reported results in Si junctions fabricated by ion implantation [1]. The results are very important for the reduction of base current in scaled bipolar transistors, especially for SiGe heterojunction bipolar transistors (HBT's), and also show the high quality of the epitaxial interface.
引用
收藏
页码：163 / 165
页数：3
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