INSITU INVESTIGATION OF THE GROWTH OF RF GLOW-DISCHARGE DEPOSITED AMORPHOUS-GERMANIUM AND SILICON FILMS

被引：74
作者：
ANTOINE, AM
DREVILLON, B
CABARROCAS, PRI
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 07期
关键词：
D O I：
10.1063/1.337924
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2501 / 2508
页数：8
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