INSITU INVESTIGATION OF THE GROWTH OF RF GLOW-DISCHARGE DEPOSITED AMORPHOUS-GERMANIUM AND SILICON FILMS

被引：74

作者：

ANTOINE, AM

DREVILLON, B

CABARROCAS, PRI

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.337924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2501 / 2508

页数：8

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