STRAIN-INDUCED LATERAL BAND-GAP MODULATION IN SI1-XGEX/SI QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES

被引：5
|
作者：
USAMI, N
SUNAMURA, H
MINE, T
FUKATSU, S
SHIRAKI, Y
机构：
[1] Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Meguro-ku, Tokyo, 153
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)80102-I
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We demonstrate two methods to induce lateral band gap modulation in buried Si1-xGex/Si quantum well structures (QWs). The basic feature of the first one is to utilize the generation of inhomogeneous strain field due to two-dimensional to three-dimensional growth mode transition of SiGe/Si heterostructures in gas-source molecular beam epitaxy. The second one is to grow SiGe/Si QWs directly on artificially-v-grooved Si substrates. The both were found to be useful for inducing lateral band gap modulation as evidenced by photoluminescence spectroscopy.
引用
收藏
页码：1065 / 1069
页数：5
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