SPIRAL GROWTH OF GASB ON (001)GAAS USING MOLECULAR-BEAM EPITAXY

被引：56
作者：
BRAR, B
LEONARD, D
机构：
[1] Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期
关键词：
D O I：
10.1063/1.114057
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomic force microscopy is employed to obtain images of the surface of GaSb epilayers grown on (001) GaAs using molecular beam epitaxy. The images reveal a surface that consists of micron size mounds that are approximately 4 nm high. A stepped surface is clearly observed on the mounds with a single step edge that originates from a screw dislocation at the center of the mound and moves out to the edge in a spiral fashion. The surface structure of the spiral mounds is observed to depend on the growth temperature of the GaSb epilayer, presumably as a result of a shorter diffusion length of the group III adatoms for lower substrate temperatures. © 1995 American Institute of Physics.
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页码：463 / 465
页数：3
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