NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN SI OR GAAS AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY

被引：31
作者：
ASPNES, DE
THEETEN, JB
CHANG, RPH
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期
关键词：
D O I：
10.1116/1.570202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1374 / 1378
页数：5
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