SI AND GE GAS-SOURCE MOLECULAR-BEAM EPITAXY (GSMBE)

被引：14

作者：

SUEMITSU, M

HIROSE, F

MIYAMOTO, N

机构：

[1] Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai, 980

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90595-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth using Si and Ge gas-source molecular beam epitaxy (GSMBE) has been studied. Selective epitaxy which occurs in both GSMBE systems has enabled precise measurements of growth rate to be made. Effects of varying growth temperature, the Si- or Ge-bearing gas pressure, and co-irradiation with 147 nm vacuum ultraviolet photons were investigated in detail. The role of substrate misorientation on growth has also been clarified. Possible models for the growth kinetics for both systems are presented and discussed.

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页码：1015 / 1020

页数：6

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