INTERACTION OF SILVER AND ALUMINUM ON GALLIUM-ARSENIDE (001) SURFACES - STUDY BY MBE AND ASSOCIATED TECHNIQUES

被引：26
作者：
MASSIES, J
ETIENNE, P
LINH, NT
机构：
[1] Laboratoire Central de Recherches, Thomson-CSF, F-91401 Orsay
来源：
SURFACE SCIENCE | 1979年 / 80卷 / 01期
关键词：
D O I：
10.1016/0039-6028(79)90716-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have studied ultra-high vacuum deposition of silver and aluminium on GaAs(001) epitaxial layers in situ made by MBE. We found two main types of epitaxial growth: the low temperature nearly perfect growth with the epitaxial relations (110)Ag and (001)Al ∥ (001)GaAs, and the high temperature facetting growth with the epitaxial relations (001)Ag and (110)Al ∥ (001)GaAs. © 1979.
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页码：550 / 556
页数：7
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