STRUCTURAL MODEL FOR THE NEGATIVE ELECTRON-AFFINITY SURFACE OF O/CS/SI(001)2X1

被引：40

作者：

ABUKAWA, T ^{[1
]}

KONO, S ^{[1
]}

SAKAMOTO, T ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 02期

关键词：

D O I：

10.1143/JJAP.28.L303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L303 / L305

页数：3

共 11 条

[1] PHOTOELECTRON DIFFRACTION STUDY OF SI(001)2X1-K SURFACE - EXISTENCE OF A POTASSIUM DOUBLE-LAYER [J].

ABUKAWA, T ;

KONO, S .

PHYSICAL REVIEW B, 1988, 37 (15) :9097-9099

[2]

ABUKAWA T, IN PRESS SURF SCI

[3] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J].

BRINGANS, RD ;

UHRBERG, RIG ;

OLMSTEAD, MA ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1986, 34 (10) :7447-7450

[4] ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY STUDY OF THE SI(001)2X1-K SURFACE [J].

ENTA, Y ;

KINOSHITA, T ;

SUZUKI, S ;

KONO, S .

PHYSICAL REVIEW B, 1987, 36 (18) :9801-9804

[5]

ENTA Y, IN PRESS PHYS REV B

[6] LEED, AUGER AND PLASMON STUDIES OF NEGATIVE ELECTRON AFFINITY ON SI PRODUCED BY ADSORPTION OF CS AND O [J].

GOLDSTEI.B .

SURFACE SCIENCE, 1973, 35 (01) :227-245

[7] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[8] LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J].

KAPLAN, R .

SURFACE SCIENCE, 1980, 93 (01) :145-158

[9] STRUCTURAL AND ELECTRONIC MODEL OF NEGATIVE ELECTRON AFFINITY ON SI-CS-O SURFACE [J].

LEVINE, JD .

SURFACE SCIENCE, 1973, 34 (01) :90-107

[10] CS AND O ADSORPTION ON SI(100) 2 X-1 - A MODEL SYSTEM FOR PROMOTED OXIDATION OF SEMICONDUCTORS [J].

ORTEGA, JE ;

OELLIG, EM ;

FERRON, J ;

MIRANDA, R .

PHYSICAL REVIEW B, 1987, 36 (11) :6213-6216

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