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- [1] Growth of GaAs on high temperature hydrogen pretreated (100) Si substrates by molecular beam epitaxyJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (08): : 1458 - 1463Humphreys, T.P.Das, K.Posthill, J.B.Tarn, J.C.L.Jaing, B.L.Wortman, J.J.Parikh, N.R.
- [2] Growth of InNAs on GaAs(100) substrates by molecular-beam epitaxyJOURNAL OF CRYSTAL GROWTH, 1998, 189 : 471 - 475Sakai, SCheng, TSFoxon, TCSugahara, TNaoi, YNaoi, H
- [3] STUDIES OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS ON POROUS SI SUBSTRATESJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 696 - 698MII, YJLIN, TLKAO, YCWU, BJWANG, KLNIEH, CWJAMIESON, DNLIU, JK
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- [5] INITIAL GROWTH OF GAAS ON SI(111) SUBSTRATES BY MOLECULAR-BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1995, 154 (1-2) : 85 - 91YODO, TTAMURA, M
- [6] GROWTH OF HIGH-QUALITY (100)CDTE FILMS ON (100)GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXYJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 417 - 418BICKNELL, RNGILESTAYLOR, NCYANKA, RWSCHETZINA, JFMAGEE, TJLEUNG, CKAWAYOSKI, HWOOLHOUSE, GR
- [7] HIGH-TEMPERATURE GROWTH OF SI-DOPED ALGAAS BY MOLECULAR-BEAM EPITAXYJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1264 - 1269SAITO, JKONDO, K
- [8] GAAS HETEROEPITAXIAL GROWTH ON VICINAL SI(110) SUBSTRATES BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1994, 76 (11) : 7630 - 7632YODO, TTAMURA, MLOPEZ, MKAJIKAWA, Y
- [9] Initial growth of GaAs on vicinal Si(111) substrates by molecular-beam epitaxyJapanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (10 A):Yodo, T.
- [10] INITIAL GROWTH OF GAAS ON VICINAL SI(111) SUBSTRATES BY MOLECULAR-BEAM EPITAXYJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10A): : L1251 - L1253YODO, T