FORMATION OF THE INTERFACE BETWEEN GAAS AND SI - IMPLICATIONS FOR GAAS-ON-SI HETEROEPITAXY

被引：45

作者：

BRINGANS, RD

OLMSTEAD, MA

UHRBERG, RIG

BACHRACH, RZ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.98386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：523 / 525

页数：3

共 12 条

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JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859

[2]

Bringans R. D., 1987, 18th International Conference on the Physics of Semiconductors, P191

[3] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J].

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OLMSTEAD, MA ;

BACHRACH, RZ .

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[4] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J].

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NORTHRUP, JE .

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[5]

FAN JCC, 1986, MATERIAL RES SOC S P, V67

[6] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

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MORKOC, H ;

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CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[7] POLAR HETEROJUNCTION INTERFACES [J].

HARRISON, WA ;

KRAUT, EA ;

WALDROP, JR ;

GRANT, RW .

PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410

[8] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION [J].

HULL, R ;

FISCHERCOLBRIE, A .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :851-853

[9]

OLMSTEAD MA, 1986, PHYS REV B, V34, P6401

[10] ELECTRONIC-STRUCTURE, ATOMIC-STRUCTURE, AND THE PASSIVATED NATURE OF THE ARSENIC-TERMINATED SI(111) SURFACE [J].

UHRBERG, RIG ;

BRINGANS, RD ;

OLMSTEAD, MA ;

BACHRACH, RZ ;

NORTHRUP, JE .

PHYSICAL REVIEW B, 1987, 35 (08) :3945-3951

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