EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS

被引：26

作者：

HILL, G

ROBSON, PN

MAJERFELD, A

FAWCETT, W

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND

[2] ROYAL SIGNALS & RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1049/el:19770171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：235 / 236

页数：2

共 7 条

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[3] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS [J].

MALONEY, TJ ;

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) :357-358

[4] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING [J].

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FREY, J .

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[5] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J].

RUCH, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :652-&

[6] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

[7] INFLUENCE OF NONUNIFORM FIELD DISTRIBUTION ON FREQUENCY LIMITS OF GAAS FIELD-EFFECT TRANSISTORS [J].

SHUR, M .

ELECTRONICS LETTERS, 1976, 12 (23) :615-616

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