ORIGIN OF THE 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED POROUS SILICON

被引：77

作者：

SHIN, JH

VANDENHOVEN, GN

POLMAN, A

机构：

[1] FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 18期

关键词：

D O I：

10.1063/1.113989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence of erbium-implanted porous silicon is investigated. Room temperature 1.54 μm Er3+ luminescence is observed after annealing. The luminescence spectrum, annealing characteristics, temperature quenching, and the luminescence lifetime suggest that the Er3+ luminescence is mediated by photocarriers in the amorphous silicon matrix in porous silicon, and not related to the presence of the crystal nanograins.© 1995 American Institute of Physics.

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页码：2379 / 2381

页数：3

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