HETEROEPITAXY OF GE1-XSIX ON SI BY TRANSIENT HEATING OF GE-COATED SI SUBSTRATES

被引：19

作者：

FAN, JCC

GALE, RP

DAVIS, FM

FOLEY, GH

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期

关键词：

D O I：

10.1063/1.91751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1024 / 1027

页数：4

共 11 条

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FAN, JCC ;

ZEIGER, HJ ;

GALE, RP ;

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[7] HETEROEPITAXY OF A DEPOSITED AMORPHOUS-GERMANIUM LAYER ON A SILICON SUBSTRATE BY LASER ANNEALING [J].

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LAU, SS ;

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[8]

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[10]

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