HETEROEPITAXY OF GE1-XSIX ON SI BY TRANSIENT HEATING OF GE-COATED SI SUBSTRATES

被引：19
|
作者：
FAN, JCC
GALE, RP
DAVIS, FM
FOLEY, GH
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期
关键词：
D O I：
10.1063/1.91751
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1024 / 1027
页数：4
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