CHARACTERIZATION OF EL2 IN GAAS WAFERS BY SCANNING ISOTHERMAL TRANSIENT SPECTROSCOPY

被引：10

作者：

OKUSHI, H

TOKUMARU, Y

NAKA, H

机构：

[1] CHUO UNIV,BUNKYO KU,TOKYO 112,JAPAN

[2] MICRON JAPAN CO LTD,MUSASHINO,TOKYO 180,JAPAN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 1A期

关键词：

D O I：

10.1088/0268-1242/7/1A/038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a novel scanning deep level transient spectroscopy system based on laser-excited junction capacitance or current transient measurements under isothermal conditions (scanning isothermal transient spectroscopy or SICTS). By applying the system to the measurement of deep levels in GaAs, we have successfully obtained precise information on the spatial distribution of EL2 in n-type GaAs wafers.

引用

页码：A196 / A201

页数：6

共 12 条

[1] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].