CAPILLARY LIQUID FILM TECHNIQUE FOR SOLUTION EPITAXY OF III-V COMPOUNDS

[1] Minden H. T., 1970, Journal of Crystal Growth, V6, P228, DOI 10.1016/0022-0248(70)90071-0

[2] PREPARATION OF MULTILAYER LPE HETEROSTRUCTURES WITH CRYSTALLINE SOLID SOLUTIONS OF ALXGA1-XAS - HETEROSTRUCTURE LASERS [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 795 - &

[3] Pfann W. G., 1958, ZONE MELTING, P198

[4] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 221 - +

[5] GAP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7 PERCENT [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 229 - +

[6] Tiller W.A., 1968, J CRYST GROWTH, V2, P69, DOI 10.1016/0022-0248(68)90045-6

[1] Minden H. T., 1970, Journal of Crystal Growth, V6, P228, DOI 10.1016/0022-0248(70)90071-0

[2] PREPARATION OF MULTILAYER LPE HETEROSTRUCTURES WITH CRYSTALLINE SOLID SOLUTIONS OF ALXGA1-XAS - HETEROSTRUCTURE LASERS [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 795 - &

[3] Pfann W. G., 1958, ZONE MELTING, P198

[4] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 221 - +

[5] GAP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7 PERCENT [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 229 - +

[6] Tiller W.A., 1968, J CRYST GROWTH, V2, P69, DOI 10.1016/0022-0248(68)90045-6