TRANSIENT SOLID-PHASE CRYSTALLIZATION STUDY OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS BY INSITU X-RAY-DIFFRACTION

被引：21
作者：
BISARO, R
MAGARINO, J
PASTOL, Y
GERMAIN, P
ZELLAMA, K
机构：
[1] EURODISPLAY,F-91404 ORSAY,FRANCE
[2] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
[3] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75252 PARIS 05,FRANCE
来源：
PHYSICAL REVIEW B | 1989年 / 40卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.40.7655
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7655 / 7662
页数：8
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