ANALYSIS AND DESIGN OF A 4-TERMINAL SILICON PRESSURE SENSOR AT THE CENTER OF A DIAPHRAGM

被引：7
作者：
BAO, MH
WANG, Y
机构：
[1] Fudan Univ, Shanghai, China, Fudan Univ, Shanghai, China
来源：
SENSORS AND ACTUATORS | 1987年 / 12卷 / 01期
关键词：
This work 1s funded by the Science Fund of the Chinese Academy of Sciences; and technrcally supported by the IC Laboratory at the Institute of Mlcroelectronlcs The authors are grateful to Prof Xrde Xle and Prof. Pushan Tang for their support of the proJect. They are very grateful to Prof Wen H Ko and Mr Gongzhong Ye for their valuable discussions and suggestrons;
D O I：
10.1016/0250-6874(87)87005-1
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
6
引用
收藏
页码：49 / 56
页数：8
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