PROCESS-CONTROLS FOR RADIATION-HARDENED ALUMINUM GATE BULK SILICON CMOS

被引：21
作者：
GREGORY, BL [1 ]
机构：
[1] SANDIA LABS, ALBUQUERQUE, NM 87115 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1975年 / 22卷 / 06期
关键词：
D O I：
10.1109/TNS.1975.4328122
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2295 / 2302
页数：8
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