High Power and Single Mode Lasing Characteristics in Vertical Cavity Surface Emitting Laser by Varying Photonic Bandgap Structures

被引:0
作者
Lee, Jin-woong [1 ]
Hyun, Kyung-Sook [1 ]
Shin, Hyun-Ee [2 ]
Kim, Hee-Dae [2 ]
机构
[1] Sejong Univ, Dept Opt Engn, Seoul 143747, South Korea
[2] Opt Co Ltd, Gwangju 500779, South Korea
关键词
Vertical cavity surface emitting laser; Photonic crystal; Single mode lasing; Semiconductor laser;
D O I
10.3807/KJOP.2009.20.6.339
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The high power and single mode vertical cavity surface emitting laser(VCSEL)s with photonic crystal structures have been proposed and fabricated by reducing substantially the hole numbers used in the photonic crystal structures. It is found that only six holes enable VCSELs to operate a single mode and the reliability can be enhanced by filling the holes with polyimide. The single mode lasing characteristics were analyzed by varying the oxide aperture and the hole diameter in photonic crystal structures. As a result, the single mode lasing can be stably obtained in the photonic crystal vertical cavity surface emitting lasers.
引用
收藏
页码:339 / 345
页数:7
相关论文
共 13 条
  • [1] Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal
    Baek, JH
    Song, DS
    Hwang, IK
    Lee, KH
    Lee, YH
    Ju, YG
    Kondo, T
    Miyamoto, T
    Koyama, F
    [J]. OPTICS EXPRESS, 2004, 12 (05): : 859 - 867
  • [2] Birkedal D., 2003, Optical Fiber Communications Conference (OFC). (Trends in Optics and Photonics Series Vol.86) Postconference Digest (IEEE Cat. No.03CH37403), P83
  • [3] Single transverse mode selectively oxidized vertical cavity lasers
    Choquette, KD
    Geib, KM
    Briggs, RD
    Allerman, AA
    Hindi, JJ
    [J]. VERTICAL-CAVITY SURFACE-EMITTING LASERS IV, 2000, 3946 : 230 - 233
  • [4] Modal gain and confinement factors in top- and bottom-emitting photonic-crystal VCSEL
    Czyszanowski, T.
    Dems, M.
    Thienpont, H.
    Panajotov, K.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (08)
  • [5] Single-mode operation from an external cavity controlled vertical-cavity surface-emitting laser
    Giudice, GE
    Kuksenkov, DV
    de Peralta, LG
    Temkin, H
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) : 1545 - 1547
  • [6] SURFACE EMITTING SEMICONDUCTOR-LASERS
    IGA, K
    KOYAMA, F
    KINOSHITA, S
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) : 1845 - 1855
  • [7] Transverse mode selection in large-area oxide-confined vertical-cavity surface-emitting lasers using a shallow surface relief
    Martinsson, H
    Vukusic, JA
    Grabherr, M
    Michalzik, R
    Jäger, R
    Ebeling, KJ
    Larsson, A
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) : 1536 - 1538
  • [8] Single high-order transverse mode surface-emitting laser with controlled far-field pattern
    Shinada, S
    Koyama, F
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (12) : 1641 - 1643
  • [9] Single-fundamental-mode photonic-crystal vertical-cavity surface-emitting lasers
    Song, DS
    Kim, SH
    Park, HG
    Kim, CK
    Lee, YH
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (21) : 3901 - 3903
  • [10] Improving single-mode VCSEL performance by introducing a long monolithic cavity
    Unold, HJ
    Mahmoud, SWZ
    Jäger, R
    Kicherer, M
    Riedl, MC
    Ebeling, KJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (08) : 939 - 941