EFFECT OF CUXS LAYER ON DC THIN-FILM ELECTROLUMINESCENT DEVICES

被引：0

作者：

JAYARAJ, MK ^{[1
]}

机构：

[1] CSIR,REG RES LAB,TRIVANDRUM 695019,INDIA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1993年 / 4卷 / 03期

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroluminescent properties of thin film devices with ZnS activated with rare earth and manganese are reported. The devices were prepared by a method involving a three-step process, namely evaporation of ZnS, dipping in CuCl solution and evaporation of ZnS:A, Cl (A = Mn, Sm, Dy, Pr) layer. The electroluminescent emission spectra show an emission characteristic of copper in addition to that of the dopant. The current-voltage characteristic of the device indicate that there is a Cu(x)S/ZnS:A, Cl heterojunction.

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页码：229 / 232

页数：4

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