MEASUREMENT OF HEAVY DOPING PARAMETERS IN SILICON BY ELECTRON-BEAM-INDUCED CURRENT

被引：52
作者：
POSSIN, GE
ADLER, MS
BALIGA, BJ
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 05期
关键词：
D O I：
10.1109/T-ED.1980.19968
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：983 / 990
页数：8
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