MEASUREMENT OF HEAVY DOPING PARAMETERS IN SILICON BY ELECTRON-BEAM-INDUCED CURRENT

被引：52

作者：

POSSIN, GE

ADLER, MS

BALIGA, BJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 05期

关键词：

D O I：

10.1109/T-ED.1980.19968

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：983 / 990

页数：8

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