THE INFLUENCE OF ELECTRIC-FIELD AND MOBILITY PROFILE ON GAAS-MESFET CHARACTERISTICS

[1] BAEK J, 1985, IEEE T ELECTRON DEV, V32, P2426

[2] CHEN CH, 1988, AUG INT EL DEV MAT S

[3] CHEN TH, 1985, IEEE T ELECTRON DEV, V32, P18, DOI 10.1109/T-ED.1985.21903

[4] EXTENSION OF EXISTING MODELS TO ION-IMPLANTED MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (06) : 638 - 647

[5] MEASUREMENT OF THE LOW-FIELD ELECTRON-MOBILITY AND COMPENSATION RATIO PROFILES IN GAAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 431 - 433

[6] PROFILE STUDIES OF ION-IMPLANTED MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) : 1066 - 1071

[7] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 577 - &

[8] 2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1353 - +

[9] MAGNETOTRANSCONDUCTANCE MOBILITY MEASUREMENTS OF GAAS-MESFETS [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 265 - 267

[10] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &

[1] BAEK J, 1985, IEEE T ELECTRON DEV, V32, P2426

[2] CHEN CH, 1988, AUG INT EL DEV MAT S

[3] CHEN TH, 1985, IEEE T ELECTRON DEV, V32, P18, DOI 10.1109/T-ED.1985.21903

[4] EXTENSION OF EXISTING MODELS TO ION-IMPLANTED MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (06) : 638 - 647

[5] MEASUREMENT OF THE LOW-FIELD ELECTRON-MOBILITY AND COMPENSATION RATIO PROFILES IN GAAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 431 - 433

[6] PROFILE STUDIES OF ION-IMPLANTED MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) : 1066 - 1071

[7] CHARACTERISTICS OF JUNCTION FIELD EFFECT DEVICES WITH SMALL CHANNEL LENGTH-TO-WIDTH RATIOS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 577 - &

[8] 2-DIMENSIONAL ANALYSIS OF GALLIUM-ARSENIDE JUNCTION FIELD-EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1353 - +

[9] MAGNETOTRANSCONDUCTANCE MOBILITY MEASUREMENTS OF GAAS-MESFETS [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 265 - 267

[10] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &