BAND-MIXING EFFECTS AND EXCITONIC OPTICAL-PROPERTIES IN GAAS QUANTUM WIRE STRUCTURES - COMPARISON WITH THE QUANTUM WELLS

被引：103
作者：
SUEMUNE, I
COLDREN, LA
机构：
[1] Univ of California, Santa Barbara,, CA, USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 08期
关键词：
OPTICAL PROPERTIES - QUANTUM THEORY - SEMICONDUCTING ALUMINUM COMPOUNDS -- Charge Carriers;
D O I：
10.1109/3.7107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The excitonic properties in quantum-wire structures (QWS) are analyzed by taking into account the band-mixing effects in the valence band of the structure. The effective mass value in the wire direction at the zone center of the lowest heavy-hole-like subband is found to be as small as 0.027m0 for GaAs/AlGaAs QWS. This reduced effective mass and the related nonparabolicity of the subband structure play a significant role in determining the exciton properties. Using these results, the maximum excitonic contribution to the refractive index value is estimated to be 0.59, i.e., 17.4% of the bulk value for a GaAs/Al0.4Ga0.6As QWS with a 50 angstrom × 50 angstrom cross section. This value is six times larger than that in the 50-angstrom quantum well. With an electric field of 8 × 104 V/cm perpendicular to the heterointerface, a maximum refractive index change 30% larger than this value is estimated.
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页码：1778 / 1790
页数：13
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