SURFACE PIEZORESISTANCE IN GERMANIUM AND SILICON

被引：1

作者：

SOCHANSKI, J

LAGOWSKI, J

MORAWSKI, A

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(71)90143-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：552 / +

页数：1

共 8 条

[1] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS
COLMAN, D
BATE, RT
MIZE, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &
[2] GORKUN YI, 1969, UKR FIZ ZH, V14, P260
[3] SURFACE TRANSPORT IN SEMICONDUCTORS
GREENE, RF
FRANKL, DR
ZEMEL, J
[J]. PHYSICAL REVIEW, 1960, 118 (04): : 967 - 975
[4] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[5] LAGOWSKI JJ, 1970, SURF SCI, V23, P463, DOI 10.1016/0039-6028(70)90174-3
[6] MANY A, 1965, SEMICONDUCTOR SURFAC, P312
[7] Many A., 1965, SEMICONDUCTOR SURFAC
[8] AN MOS-ORIENTED INVESTIGATION OF EFFECTIVE MOBILITY THEORY
PIERRET, RF
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 279 - &