SINGLE LONGITUDINAL MODE-OPERATION OF ER-DOPED 1.5-MU-M INGAASP LASERS

被引：41
作者：
VANDERZIEL, JP
OBERG, MG
LOGAN, RA
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 19期
关键词：
D O I：
10.1063/1.97892
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1313 / 1315
页数：3
相关论文
共 7 条
[1]   1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].
ENNEN, H ;
SCHNEIDER, J ;
POMRENKE, G ;
AXMANN, A .
APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945
[2]   1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].
ENNEN, H ;
POMRENKE, G ;
AXMANN, A ;
EISELE, K ;
HAYDL, W ;
SCHNEIDER, J .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383
[3]   PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP [J].
POMRENKE, GS ;
ENNEN, H ;
HAYDL, W .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :601-610
[4]   ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J].
SMITH, RS ;
MULLER, HD ;
ENNEN, H ;
WENNEKERS, P ;
MAIER, M .
APPLIED PHYSICS LETTERS, 1987, 50 (01) :49-51
[5]  
TSANG W, COMMUNICATION
[6]   A NEW HIGH-POWER, NARROW-BEAM TRANSVERSE-MODE STABILIZED SEMICONDUCTOR-LASER AT 1.5-MU-M - THE HETEROEPITAXIAL RIDGE OVERGROWN LASER [J].
TSANG, WT ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1025-1027
[7]   OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J].
TSANG, WT ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1986, 49 (25) :1686-1688
1