MONOLITHIC INTEGRATION OF OPTOELECTRONIC, ELECTRONIC AND PASSIVE COMPONENTS IN GAALAS/GAAS MULTILAYERS

被引：10

作者：

CARTER, AC

FORBES, N

GOODFELLOW, RC

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 02期

关键词：

D O I：

10.1049/el:19820050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：72 / 74

页数：3

相关论文

共 7 条

[1] INTEGRATED DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS PHOTORECEIVER WITH AUTOMATIC GAIN-CONTROL
BARNARD, J
OHNO, H
WOOD, CEC
EASTMAN, LF
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (01): : 7 - 9
[2] MONOLITHIC INTEGRATION OF A GAALAS INJECTION-LASER WITH A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR
FUKUZAWA, T
NAKAMURA, M
HIRAO, M
KURODA, T
UMEDA, J
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 181 - 183
[3] GAINASP-INP FAST, HIGH-RADIANCE, 1.05-1.3-MU-M WAVELENGTH LEDS WITH EFFICIENT LENS COUPLING TO SMALL NUMERICAL APERTURE SILICA OPTICAL FIBERS
GOODFELLOW, RC
CARTER, AC
GRIFFITH, I
BRADLEY, RR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (08) : 1215 - 1220
[4] A MONOLITHIC INTEGRATION OF GAAS-GAAIAS BIPOLAR-TRANSISTOR AND HETEROSTRUCTURE LASER
KATZ, J
BARCHAIM, N
CHEN, PC
MARGALIT, S
URY, I
WILT, D
YUST, M
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 211 - 213
[5] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER
LEHENY, RF
NAHORY, RE
POLLACK, MA
BALLMAN, AA
BEEBE, ED
DEWINTER, JC
MARTIN, RJ
[J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355
[6] MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
URY, I
MARGALIT, S
YUST, M
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (07) : 430 - 431
[7] URY I, 1979, APPL PHYS LETT, V35, P795