AMBIENT-TEMPERATURE DIODES AND FIELD-EFFECT TRANSISTORS IN INSB/IN1-XALXSB

InSb and related narrow-gap alloys have many potential applications in addition to the conventional one of infrared detection, provided that ambient temperature operation can be achieved. We report experimental results on multilayer InSb/In1-xAlxSb structures utilizing minority-carrier exclusion and extraction. At room temperature, diodes have R0A values several orders higher than homostructure InSb devices. Negative differential resistance associated with Auger suppression is observed under reverse bias. Enhancement-mode metal-insulator-semiconductor field-effect transistors have near classical output characteristics at 294 K, with a typical transconductance of 34 mS/mm and dynamic range of 23 dB.