SILICON INTERFACES WITH HIGH-TEMPERATURE SUPERCONDUCTORS

被引：7

作者：

HILL, DM ^{[1
]}

MEYER, HM ^{[1
]}

WEAVER, JH ^{[1
]}

SPENCER, ND ^{[1
]}

机构：

[1] WR GRACE & CO CONN,COLUMBIA,MD 21044

来源：

SURFACE SCIENCE | 1990年 / 236卷 / 03期

关键词：

D O I：

10.1016/0039-6028(90)90480-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

X-ray photoelectron spectroscopy was used to study vapor-deposition and growth of Si overlayers on polycrystalline YBa2Cu3O7 - x and (PbBi)2Sr2 - xCa1 + xCu2O8 - y. Interface reactions at low coverage for both superconductors were characterized by O withdrawal from the near-surface region of the superconductors and oxidation of the Si adatoms. Oxygen loss from the substrate resulted in substantial disruption and reduction of the nominal Cu oxidation state from 2 + to 1 + . Disruption and O loss were more extensive for YBa2Cu3O7 - x, demonstrating the higher surface stability of (PbBi)2Sr2 - xCa1 + xCu2O8 - y. Surface modification for Si/YBa2Cu3O7 - x resulted in the loss of Cu-O derived states near the Fermi level and a shift of the Fermi level in the resulting gap. A Si film formed on the reacted interface region as O redistribution was kinetically limited at higher coverages. © 1990.

引用

页码：377 / 384

页数：8

共 23 条

[1] SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - DIFFUSION PARAMETERS AND BEHAVIOR AT ELEVATED-TEMPERATURES [J].