CHARACTERIZATION OF MOCVD GROWN GA1-XALXAS FOR DOUBLE HETEROSTRUCTURE LASERS

被引：0
|
作者：
GLEW, RW
GARRETT, B
BRIGGS, ATR
THRUSH, EJ
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1988年 / 3卷 / 07期
关键词：
D O I：
10.1088/0268-1242/3/7/011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：701 / 705
页数：5
相关论文
共 50 条
  • [31] Effect of the intense laser field on the valance band for Ga1-xAlxAs/GaAs heterostructure
    Ozturk, Emine
    Sokmen, Ismail
    SUPERLATTICES AND MICROSTRUCTURES, 2009, 45 (01) : 16 - 21
  • [32] EFFECTS OF COMPOSITION PROFILE ON CHARACTERISTICS OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS
    NAKASHIMA, H
    CHINONE, N
    TAGUCHI, Y
    NAKADA, O
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2688 - 2689
  • [33] GA1-XALXAS WAVEGUIDES GROWN BY SELECTIVE LIQUID-PHASE EPITAXY
    BELLAVANCE, DW
    CAMPBELL, JC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C268 - C268
  • [34] Ballistic electron emission microscopy of InAs/Ga1-xAlxAs relaxed heterostructure interfaces
    Ke, Mao-long
    Westwood, D.I.
    Matthai, C.C.
    Richardson, B.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1995, B35 (1-3): : 349 - 352
  • [35] GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK DIODE LASERS
    NAKAMURA, M
    AIKI, K
    UMEDA, J
    YARIV, A
    YEN, HW
    MORIKAWA, T
    APPLIED PHYSICS LETTERS, 1974, 25 (09) : 487 - 488
  • [36] NATURE OF THE DX CENTER IN GA1-XALXAS
    ZAZOUI, M
    FENG, SL
    BOURGOIN, JC
    PHYSICAL REVIEW B, 1991, 44 (19): : 10898 - 10900
  • [37] WAVELENGTH MODULATION SPECTROSCOPY OF GA1-XALXAS
    LANDE, R
    MADELON, R
    HAIRIE, A
    FORTINI, A
    REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (03): : 483 - 485
  • [38] LIQUID PHASE EPITAXY OF GA1-XALXAS
    ANDRE, E
    MAHIEU, M
    LEDUC, JM
    JOURNAL OF CRYSTAL GROWTH, 1971, 13 (MAY) : 663 - &
  • [39] IMPURITY COMPENSATION IN GA1-XALXAS ALLOYS
    SAXENA, AK
    SINGH, BB
    PHYSICAL REVIEW B, 1983, 28 (02): : 1132 - 1133
  • [40] DX CENTER IN GA1-XALXAS ALLOYS
    BOURGOIN, JC
    FENG, SL
    VONBARDELEBEN, HJ
    PHYSICAL REVIEW B, 1989, 40 (11): : 7663 - 7670
12345