RECOMBINATION RADIATION IN N- AND P-TYPE EPITAXIAL GAAS

被引:0
作者
BOGARDUS, H
BEBB, HB
REYNOLDS, RA
机构
来源
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1968年 / 13卷 / 03期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:497 / &
相关论文
共 50 条
[31]   Impact of nickel contamination on carrier recombination in n- and p-type crystalline silicon wafers [J].
D. Macdonald .
Applied Physics A, 2005, 81 :1619-1625
[32]   Impact of nickel contamination on carrier recombination in n- and p-type crystalline silicon wafers [J].
MacDonald, D .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (08) :1619-1625
[33]   RADIATIVE RECOMBINATION IN LIGHTLY AND HEAVILY DOPED P-TYPE GAAS [J].
NASLEDOV, DN ;
NEGRESKU.VV ;
TSARENKO.BV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08) :1012-+
[34]   RADIATIVE RECOMBINATION IN SILICON-DOPED P-TYPE GAAS [J].
SUSHKOV, VP ;
LYUBYANI.EB .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12) :1974-&
[35]   Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon [J].
Sun, Chang ;
Rougieux, Fiacre E. ;
Macdonald, Daniel .
JOURNAL OF APPLIED PHYSICS, 2014, 115 (21)
[36]   ELECTROLUMINESCENCE CHARACTERISTICS OF EPITAXIAL GAAS P-N-JUNCTIONS WITH DELIBERATELY COMPENSATED P-TYPE REGIONS AND N-TYPE REGIONS [J].
ALFEROV, ZI ;
ANDREEV, VM ;
GARBUZOV, DZ ;
ERMAKOVA, AN ;
MOROZOV, EP ;
TRUKAN, MK .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10) :1726-1730
[37]   An experimental study on the linear differential scattering coefficients of the GaAs, n- and p-type Si [J].
Icelli, Orhan ;
Cankaya, Gueven ;
Cetin, Ahmet .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 605 (03) :359-363
[38]   Radiation hardness of high resistivity n- and p-type magnetic Czochralski silicon [J].
Segneri, G. ;
Borrello, L. ;
Boscardin, M. ;
Bruzzi, M. ;
Creanza, D. ;
Dalla Betta, G. -F. ;
De Palma, M. ;
Focardi, E. ;
Macchiolo, A. ;
Manna, N. ;
Menichelli, D. ;
Messineo, A. ;
Piemonte, C. ;
Radicci, V. ;
Ronchin, S. ;
Scaringella, M. ;
Sentenac, D. ;
Zorzi, N. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 573 (1-2) :283-286
[39]   INVESTIGATION OF DIFFUSION IN N-TYPE AND P-TYPE GAAS INDUCED BY LASER-RADIATION [J].
ARAKELYAN, VS ;
BARKHUDARYAN, GR .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (04) :400-402
[40]   Thermopower investigation of n- and p-type GaN [J].
Brandt, MS ;
Herbst, P ;
Angerer, H ;
Ambacher, O ;
Stutzmann, M .
PHYSICAL REVIEW B, 1998, 58 (12) :7786-7791