共 50 条
- [1] Electrical properties of n- and p-type doped epitaxial GaAs layers grown by OMVPE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 336 - 340
- [3] PHOTOLUMINESCENCE OF EPITAXIAL N-TYPE GAAS PREPARED FROM P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 551 - +
- [5] Recombination in n- and p-type silicon emitters contaminated with iron CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 952 - 955
- [6] INFLUENCE OF COMPENSATION ON RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1089 - +
- [7] Radiative recombination in n-type and p-type GaAs compensated with Li Journal of Applied Physics, 1993, 74 (12):
- [9] SURFACE RECOMBINATION VELOCITY IN P-TYPE GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1A): : 88 - 89