CHARACTERISTIC FEATURES OF RADIATION DEFECTS IN GAAS1-XPX SOLID-SOLUTIONS

[1] BRAILOVSKII EY, 1975, SOV PHYS SEMICOND+, V9, P505

[2] BRAILOVSKII EY, 1978, P C DEFECTS RAD EFFE, V46, P369

[3] KRAVCHENKO AF, 1978, SOV PHYS SEMICOND, V12, P352

[4] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 489 - 492

[5] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882

[6] DEFECT CENTERS IN GAAS1-XPX ELECTROLUMINESCENT DIODES DUE TO HIGH-ENERGY ELECTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3783 - &

[7] THOMPSON F, 1973, 1972 P INT C RAD DAM, P371

[1] BRAILOVSKII EY, 1975, SOV PHYS SEMICOND+, V9, P505

[2] BRAILOVSKII EY, 1978, P C DEFECTS RAD EFFE, V46, P369

[3] KRAVCHENKO AF, 1978, SOV PHYS SEMICOND, V12, P352

[4] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 489 - 492

[5] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882

[6] DEFECT CENTERS IN GAAS1-XPX ELECTROLUMINESCENT DIODES DUE TO HIGH-ENERGY ELECTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3783 - &

[7] THOMPSON F, 1973, 1972 P INT C RAD DAM, P371