CROSSOVER FROM SINGLE-LEVEL TO MULTILEVEL TRANSPORT IN ARTIFICIAL ATOMS

被引：40

作者：

FOXMAN, EB ^{[1
]}

MEIRAV, U ^{[1
]}

MCEUEN, PL ^{[1
]}

KASTNER, MA ^{[1
]}

KLEIN, O ^{[1
]}

BELK, PA ^{[1
]}

ABUSCH, DM ^{[1
]}

WIND, SJ ^{[1
]}

机构：

[1] MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.50.14193

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Measurements are reported of the temperature dependence of the conductance through a small region of electron gas separated from its leads by tunnel junctions. The quantization of charge and energy in the small region gives rise to sharp, nearly periodic peaks in the conductance as a function of electron density, one for each electron added to the isolated region. Because the charge and energy are quantized, we call this an artificial atom. At low temperature, the conductance is limited by resonant tunneling through a single quantum level of the artificial atom, but at high temperatures several levels participate. Changes in the temperature dependence of the width and height of conductance peaks display clear evidence for this crossover from single-level to multilevel transport. © 1994 The American Physical Society.

引用

页码：14193 / 14199

页数：7

共 15 条

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