CALCULATION OF CONTACT CURRENTS IN DEVICE SIMULATION

被引：5

作者：

NANZ, G

DICKINGER, P

SELBERHERR, S

机构：

[1] Institute for Microelectronics, Technical University Vienna, Vienna

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1992年 / 11卷 / 01期

关键词：

D O I：

10.1109/43.108625

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present an accurate new method for the calculation of the contact currents in a device simulation program which is applicable to arbitrarily shaped device geometries. The method is based on the evaluation of a volume integral of the calculated current densities over the whole device area with a suitably chosen weight function. Different types of weight functions are discussed and compared with the commonly used line integral along the contact. The results are illustrated by three examples: an I2L memory cell, an MOS transistor, and a resistor with a reverse-biased diode.

引用

页码：128 / 136

页数：9