LOW-TEMPERATURE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF CDXZN1-XS ON GAAS

A low temperature metalorganic vapor phase epitaxial growth of CdxZn1-xS on a (100) GaAs substrate was demonstrated using tertiarybutylmercaptan (t-BuSH) as a sulfur source precursor. Three other organic sulfide source precursors were also examined for comparison. By using t-BuSH, high growth rate and good composition controllability were attained in the growth temperature range from 330 to 440-degrees-C. The epilayer grown at T(g) = 350-degrees-C without any buffer layer between the epilayer and the substrate showed excellent crystalline properties in a wide composition range 0.53 less-than-or-equal-to x less-than-or-equal-to 0.67. n-Type doping experiments using TEIn as a dopant source were also demonstrated and doped epilayers with maximum carrier concentration of 4 x 10(18) cm-3 were obtained.