IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES

被引：272
作者：
HESS, K [1 ]
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期
关键词：
D O I：
10.1063/1.91205
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The scattering rates for the electron-impurity and the electron-phonon interactions in semiconductor multilayer heterojunction structures are calculated. It is found that phonon scattering is enhanced in such structures, whereas, impurity scattering can be strongly reduced at low temperatures as found experimentally.
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页码：484 / 486
页数：3
相关论文
共 12 条
[1]  
BARKER AS, 1978, PHYS REV B, V17, P3131
[2]  
Cho A. Y., 1975, PROGR SOLID STATE CH
[3]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[4]  
ESAKI L, 1979, PHYSICS TODAY, V34, P22
[5]  
ESAKI L, 1969, RC2418 IBM RES REP
[6]  
HESS K, 1973, J APPL PHYS, V45, P1254
[7]  
HESS K, UNPUBLISHED
[8]  
HOLONYAK N, 1979, APPL PHYS LETT, V34, P501
[9]   QUANTUM TRANSPORT THEORY OF IMPURITY-SCATTERING-LIMITED MOBILITY IN N-TYPE SEMICONDUCTORS INCLUDING ELECTRON-ELECTRON SCATTERING [J].
LUONG, M ;
SHAW, AW .
PHYSICAL REVIEW B, 1971, 4 (08) :2436-&
[10]   SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J].
SAH, CT ;
TSCHOPP, LL ;
NING, TH .
SURFACE SCIENCE, 1972, 32 (03) :561-&
12